inchange semiconductor product specification silicon pnp power transistors 2SB668 description ? with to-220c package ? high dc current gain ? darlington applications ? for use in power amplifier and switching applications pinning pin description 1 base 2 collector; connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i cm collector current-peak -5 a p c collector power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB668 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma, i b =0 -100 v v (br)cbo collector-base breakdown voltage i c =-1ma, i e =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-2ma, i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a ,i b =-8ma -2.0 v v besat base-emitter saturation voltage i c =-2a ,i b =-8ma -2.5 v i cbo collector cut-off current v cb =-120v, i e =0 -100 | a i ceo collector cut-off current v ce =-100v, i b =0 -500 | a i ebo emitter cut-off current v eb =-5v, i c =0 -2 ma h fe dc current gain i c =-1a ; v ce =-3v 2000
inchange semiconductor product specification 3 silicon pnp power transistors 2SB668 package outline fig.2 outline dimensions
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